advanced power dual n-channel enhancement electronics corp. mode power mosfet capable of 1.8v gate drive bv dss 20v lower on-resistance r ds(on) 16m surface mount package i d 7.5a rohs compliant & halogen-free description absolute maximum ratings@ t j =25 o c(unless otherwise specified) symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 90 /w data and specifications subject to change without notice gate-source voltage + 8 drain current 3 , v gs @ 4.5v 7.5 parameter rating drain-source voltage 20 drain current 3 , v gs @ 4.5v 6 pulsed drain current 1 40 total power dissipation 1.38 storage temperature range -55 to 150 201501273 1 ap9938gey-hf halogen-free product operating junction temperature range -55 to 150 thermal data parameter 2928-8 d1/d2 g2 g1 s2 s1 a dvanced power mosfets utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. the 2928-8 j-lead package provides good on-resistance performance and space saving like tsop-6. s1 g1 d1 s2 g2 d2
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 20 - - v r ds(on) static drain-source on-resistance 2 v gs =4.5v, i d =6a - 12.6 16 m v gs =2.5v, i d =4a - 14.9 22 m v gs =1.8v, i d =2a - 18.5 26 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 0.3 - 1 v g fs forward transconductance v ds =5v, i d =6a - 28 - s i dss drain-source leakage current v ds =16v, v gs =0v - - 10 ua i gss gate-source leakage v gs =+ 8v, v ds =0v - - + 30 ua q g total gate charge i d =6a - 16 26 nc q gs gate-source charge v ds =10v - 1.5 - nc q gd gate-drain ("miller") charge v gs =4.5v - 4 - nc t d(on) turn-on delay time v ds =10v - 7.5 - ns t r rise time i d =1a - 14 - ns t d(off) turn-off delay time r g =3.3 ? -31- ns t f fall time v gs =5v - 6 - ns c iss input capacitance v gs =0v - 1075 1720 pf c oss output capacitance v ds =10v - 133 - pf c rss reverse transfer capacitance f=1.0mhz - 115 - pf r g gate resistance f=1.0mhz - 1.4 2.8 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =1.1a, v gs =0v - - 1.2 v t rr reverse recovery time i s =6a, v gs =0 v , - 11 - ns q rr reverse recovery charge di/dt=100a/s - 4 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. ap9938gey-hf 3.surface mounted on 1 in 2 copper pad of fr4 board, t < 10sec ; 210 o c/w when mounted on min. copper pad. 2
a p9938gey-hf fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 6 12 18 24 30 01234 v ds , drain-to-source voltage (v) i d , drain current (a) 5.0v 4.5v 3.5v 2.5v v g =2.0v t a =25 o c 0 5 10 15 20 25 012345 v ds , drain-to-source voltage (v) i d , drain current (a) t a = 150 o c 5.0v 4.5v 3.5v 2.5v v g =2.0v 12 14 16 18 20 12345 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =2a t a =25 o c 0.6 1.0 1.4 1.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =6a v g =4.5v 0.0 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) 0 2 4 6 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c i d =250ua
ap9938gey-hf fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. drain current v.s. ambient temperature 4 0 2 4 6 8 0 4 8 12 16 20 24 28 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =6a v ds =10v 0 200 400 600 800 1000 1200 1 5 9 13172125 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a r thja =210 o c/w t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse operation in this area limited by r ds(on) 0 2 4 6 8 25 50 75 100 125 150 t a , ambient temperature ( o c ) i d , drain current (a) 0 10 20 30 40 0123 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v t j = -40 o c
ap9938gey-hf marking information 5 yy6yss part number : yy6 date code (yss) y last digit of the year ss sequence
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